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[1][1] K. H. Gao, Z. Q. Li,* X. J. Liu, W. Song, H. Liu, and E. Y. Jiang, Bulk Sn1-xMnxO2 magnetic semiconductors without room-temperature ferromagnetism, Solid State Communications 138, 175 (2006).
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[2][2] H. Liu,* X. Zhang, L. Li, Y. X. Wang, K. H. Gao, Z. Q. Li,* R. K. Zheng, S. P. Ringer, B. Zhang, and X. X. Zhang, Role of point defects in room-temperature ferromagnetism of Cr-doped ZnO, Applied Physics Letters 91, 072511 (2007).
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[3][3] K. H. Gao, Z. Q. Li,* T. Du, E. Y. Jiang, and Y. X. Li, Ferromagnetic properties of bulk Cu1−xMnxO magnetic semiconductors, Physical Review B 75, 174444 (2007).
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[4][4] W. Z. Zhou,* T. Lin, L. Y. Shang, L. Sun, K. H. Gao, Y. M. Zhou, G. Yu, N. Tang, K. Han, B. Shen, S. L. Guo, Y. S. Gui, and J. H. Chu,* Weak antilocalization and beating pattern in high electron mobilityAlxGa1−xN/GaN two-dimensional electron gas with strong Rashba spin-orbit coupling, Journal of Applied Physics 104, 053703 (2008).
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[5][5] Y. M. Zhou, L. Y. Shang, G. Yu,* K. H. Gao, W. Z. Zhou, T. Lin, S. L. Guo, J. H. Chu,1 N. Dai, and D. G. Austing, Transport properties of a spin-split two-dimensional electron gas in an In0.53Ga0.47As/InP quantum well structure, Journal of Applied Physics 106, 073722 (2009).
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[6][6] K. H. Gao, G. Yu,* Y. M. Zhou, W. Z. Zhou, T. Lin, J. H. Chu, N. Dai, A. J. SpringThorpe, and D. G. Austing, Transport properties of AlGaAs/GaAs parabolic quantum wells, Journal of Applied Physics 105, 013712 (2009).
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[7][7] K. H. Gao, G. Yu,* Y. M. Zhou, W. Z. Zhou, T. Lin, J. H. Chu, N. Dai, D. G. Austing, Y. Gu, and Y. G. Zhang, Experimental study of weak antilocalization effects in two-dimensional system: Anomalous dephasing rate, Physical Review B 79, 085310 (2009).
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[8][8] K. H. Gao, W. Z. Zhou, Y. M. Zhou, G. Yu,* T. Lin, S. L. Guo, J. H. Chu, N. Dai,* Y. Gu, Y. G. Zhang, and D. G. Austing, Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well, Applied Physics Letters 94, 152107 (2009).
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[9][9] Y. M. Zhou, K. H. Gao, G. Yu,* W. Z. Zhou, T. Lin, S. L. Guo, J. H. Chu, and N. Dai, Gate-controlled electron-electron interactions in an In0.53Ga0.47As/InP quantum well structure, Solid State Communications 150, 251 (2010).
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[10][10] Y. M. Zhou, G. Yu,* L. M. Wei, K. H. Gao, W. Z. Zhou, T. Lin, L. Y. Shang, S. L. Guo, J. H. Chu, N. Dai, and D. G. Austing, Experimental approaches to zero-field spin splitting in a gated high-mobility In0.53Ga0.47As/InP quantum well structure: Weak antilocalization and beating pattern, Journal of Applied Physics 107, 053708 (2010).
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[11][11] W. Z. Zhou,* T. Lin, L. Y. Shang, G. Yu, K. H. Gao, Y. M. Zhou, L. M. Wei, L. J. Cui, Y. P. Zeng, S. L. Guo, and J. H. Chu,* Anomalous shift of the beating nodes in illumination-controlled In1−xGaxAs/In1−yAlyAs two-dimensional electron gases with strong spin-orbit interaction, Physical Review B 81, 195312 (2010).
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[12][12] Y. H. Sun,* T. Lin, K. H. Gao, Z. G. Hu, H. Z. Wu, P. X. Yang,* N. Dai, and J. H. Chu, Temperature dependent transport properties of p-Pb1−xMnxSe films, Journal of Applied Physics 108, 043709 (2010).
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[13][13] K. H. Gao, G. Yu,* Y. M. Zhou, L. M. Wei, T. Lin, L. Y. Shang, L. Sun, R. Yang, W. Z. Zhou, N. Dai, J. H. Chu,* D. G. Austing, Y. Gu, and Y. G. Zhang, Insulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum well, Journal of Applied Physics 108, 063701 (2010).
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[14][14] K. H. Gao,* G. Yu,* A. J. SpringThorpe, D. G. Austing, T. Lin, G. J. Hu, N. Dai, and J. H. Chu, Anomalous dephasing of two-dimensional electrons in an AlGaAs/GaAs parabolic quantum well structure, Solid State Communications 151, 1537 (2011).
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[15][15] R. Yang, K. H. Gao, Y. H. Zhang, P. P. Chen,* G. Yu,* L. M. Wei, T. Lin, N. Dai, and J. H. Chu, Weak field magnetoresistance of narrow-gap semiconductor InSb, Journal of Applied Physics 109, 063703 (2011).
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[16][16] R. Yang, K. H. Gao, L .M. Wei, X. Z. Liu, G. J. Hu, G. Yu,* T. Lin, S. L. Guo, Y. F. Wei, J. R. Yang, L. He, N. Dai, J. H. Chu, and D. G. Austing, Weak antilocalization effect in high-mobility two-dimensional electron gas in an inversion layer on p-type HgCdTe, Applied Physics Letters 99, 042103 (2011).
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[17][17] K. H. Gao,* Q. W. Wang, G. Yu,* T. Lin, H. Y. Deng, N. Dai, and J. H. Chu, Magnetotransport properties of (In,Zn)As/InAs p-n junctions, Applied Physics Letters 98, 142110 (2011).
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[18][18] K. H. Gao,* T. Lin , L. M. Wei, X. Z. Liu, X. Chen, G. Yu,* Y. Gu, Y. G. Zhang, N. Dai, and J. H. Chu, Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs quantum well, Solid State Communications 152, 1042 (2012).
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[19][19] L. M. Wei, K. H. Gao, X. Z. Liu, G. Yu,* Q. W. Wang, T. Lin, S. L. Guo, Y. F. Wei, J. R. Yang, L. He, N. Dai, J. H. Chu, and D. G. Austing, Microwave-enhanced dephasing time in a HgCdTe film, Applied Physics Letters 102, 012108 (2013).
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[20][20] K. H. Gao,* T. Lin, X. D. Liu, X. H. Zhang, X. N. Li, J. Wu, Y. F. Liu, X. F. Wang, Y. W. Chen, B. Ni, N. Dai, and J. H. Chu, Low temperature electrical transport properties of F-doped SnO2 films, Solid State Communications 157, 49 (2013).
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[21][21] C. Yu, J. Li, K. H. Gao, T. Lin, Q. B. Liu, S. Dun, Z. He, S. Cai, and Z. H. Feng,* Observation of quantum Hall effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001), Solid State Communications 175-176, 119 (2013).
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[22][22] K. H. Gao,* Q. W. Wang, T. Lin, Z. Q. Li, X. H. Zhang, J. Xu, H. Y. Deng, and J. H. Chu, Large magnetoresistance in (In,Zn)As/InAs p-n junction, Europhysics Letters 102, 37009 (2013).
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[23][23] W. J. Wang, K. H. Gao,* Z. Q. Li, T. Lin, J. Li, C. Yu, and Z. H. Feng, Classical linear magnetoresistance in epitaxial graphene on SiC, Applied Physics Letters 105, 182102 (2014).
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[24][24] F. Wu, K. H. Gao,* Z. Q. Li, T. Lin, and W. Z. Zhou, Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures, Journal of Applied Physics 117, 155701 (2015).
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[25][25] Y. J. Zhang, K. H. Gao, and Z. Q. Li,* Crossover of electron-electron interaction effect in Sn-doped indium oxide films, Applied Physics Letter 106, 101602 (2015).
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[26][26] W. J. Wang, X. J. Xie, J. Y. Liu, and K. H. Gao,* Weak localization in CdO thin films prepared by sol-gel method, Solid State Communications 239, 1 (2016).
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[27][27] W. J. Wang, K. H. Gao,* and Z. Q. Li, Thickness-dependent transport channels in topological insulator Bi2Se3 thin films grown by magnetron sputtering, Scientific Reports 6, 25291 (2016).
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[28]Peer-reviewed journal papers (* corresponding author)
