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Liu Xinjun

School

School of Science

Professional Title

Associate professor

Discipline

Materials Physics and Chemistry

Other Contact Information

Patents

Current position: Personal Profile > Academic Achievements > Patents

Electrical pulse induced resistance change characterization for binary oxide RRAM memory cells

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Patent Applicant:X. Li, X. Cao, X. Gao, Y. Zhang, X. Liu

Description of the Invention:China patent CN101621115, Granted on Aug. 3, 2011 (No. 200910056301.5)

Type of Patent:Invent

Type of Patent:Authorized patents

Service Invention or Not:no

Next One:Homogeneous structure transparent RRAM components of zinc oxide-based and preparation technique

Address: No. 92, Weijin Road, Nankai District, Tianjin Zip Code: 300072

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