G. Qin, G. Wang, N. Jiang, J. Ma, Z. Ma: On the configuration- and frequency-dependent linearity characteristics of SiGe HBTs under different impedance matching conditions. Microelectronics Reliability, 53: 409-413 (2013).
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上一条:G. Qin, Y. Yan, N. Jiang, J. Ma, P. Ma, M. Racanelli, Z. Ma: RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures. Microelectronics Reliability, 52: 2568-2571 (2012).
下一条:G. Qin, H.C. Yuan, G.K. Celler, J. Ma, Z. Ma: Influence of bending strains on radio frequency characteristics of flexible microwave switches using single-crystal silicon nanomembranes on plastic substrate. Applied Physics Letters, 99: 153106 (2011).
