天津大学教师个人主页系统秦国轩 G. Qin, Y. Yan, N. Jiang, J. Ma, P. Ma, M. Racanelli, Z. Ma: RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures. Microelectronics Reliability, 52: 2568-2571 (2012). 中文主页

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秦国轩

教师拼音名称：Guoxuan Qin
出生日期：1984-01-11
性别：男
职称：教授
所属院系：微电子学院

论文成果

Current position:: 中文主页 >> 学术成就 >> 论文成果

G. Qin, Y. Yan, N. Jiang, J. Ma, P. Ma, M. Racanelli, Z. Ma: RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures. Microelectronics Reliability, 52: 2568-2571 (2012).

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下一条:G. Qin, G. Wang, N. Jiang, J. Ma, Z. Ma: On the configuration- and frequency-dependent linearity characteristics of SiGe HBTs under different impedance matching conditions. Microelectronics Reliability, 53: 409-413 (2013).