F. Meng, K. Ma and K. S. Yeo, "2.3 A 130-to-180GHz 0.0035mm2 SPDT switch with 3.3dB loss and 23.7dB isolation in 65nm bulk CMOS," 2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers, 2015, pp. 1-3

点击次数:

是否译文:否

上一条:W. Ye, K. Ma and K. S. Yeo, "2.5 A 2-to-6GHz Class-AB power amplifier with 28.4% PAE in 65nm CMOS supporting 256QAM," 2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers, 2015, pp. 1-3 下一条:L. Zhang, K. Ma, H. Fu, F. Feng and Y. Wang, "A Dual-Band and Dual-State Doherty Power Amplifier Using Metal-Integrated and Substrate-Integrated Suspended Line Technology," IEEE Transactions on Microwave Theory and Techniques, vol. 70, no. 1, pp.402–415, Jan. 2022