天津大学教师个人主页系统孟凡易 G. Mao and F. Meng, "A 18-to-22 GHz 22.8 dBm PSAT 18.2 dB Gain Power Amplifier in 0.13-μm CMOS SOI," 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM), Hong Kong, 2024, pp. 231-233, doi: 10.1109/GSMM61775.2024.10553183. Home

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孟凡易

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School of Microelectronics

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Professor

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Circuits and Systems

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Selected Papers

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G. Mao and F. Meng, "A 18-to-22 GHz 22.8 dBm PSAT 18.2 dB Gain Power Amplifier in 0.13-μm CMOS SOI," 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM), Hong Kong, 2024, pp. 231-233, doi: 10.1109/GSMM61775.2024.10553183.

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Pre One:Yan Kai, Ziheng Liu, Zenglong Zhao, Fanyi Meng, Switchable-coupled-inductor input-regulated Class-E converter at fixed 50%-duty-cycle 1-MHz switching signal, Microelectronics Journal, vol. 149, 2024, doi.org/10.1016/j.mejo.2024.106219.

Next One:Y. Cui, S. Bai, M. Luo, S. Zeng and F. Meng, "A 0.5~22.4 GHz Ultra-Wideband LNA Using Pole Staggering Bandwidth Extension Technology in 0.18 μm BiCMOS," 2024 IEEE MTT-S International Wireless Symposium (IWS), Beijing, China, 2024, pp. 1-3, doi: 10.1109/IWS61525.2024.10713603.