School of Microelectronics
Professor
Circuits and Systems
mengfanyi@tju.edu.cn
Dr. Meng Fanyi is a full professor at the School of Microelectronics at Tianjin University, a senior member of IEEE, awarded the national level young talent program, the chief of the National Key R&D Program for Young Scientists, a special expert of the China Association for Science and Technology's Haizhi Program, and a member of the Executive Committee of Engineering Education of the Asia Pacific Federation of Engineering Organizations (FEIAP). His research interests are CMOS RF/mmW integrated circuits and Si-CMOS/GaN heterojunction integrated circuits and systems. He published over 100 peer-reviewed papers, wrote 2 English monographs, and served as the Associate Editor of IEEE TCAS-II ('23-'24). In 2020, he was awarded the title of Excellent Science and Technology Worker by the China Electronics Society.
- Doctoral degree| Nanyang Technological University| 集成电路设计
- Bachelor Degree| Nanyang Technological University| 集成电路设计
- Si-CMOS/GaN Heterogenous Integrated Circuits and Systems
- CMOS/SiGe mmWave/THz Integrated Circuits and Systems
- Papers
- [1] Y. Zhou, K. Wang, S. Yin, W.-Y. Li, F. Meng, Z.-G. Wang, K. Ma, "A Fully Integrated Stimulator With High Stimulation Voltage Compliance Using Dynamic Bulk Biasing Technique in a Bulk CMOS Technology," in IEEE Transactions on Circuits and Systems I: Regular Papers, doi: 10.1109/TCSI.2024.3376370.
- [2] B. Liu, F. Meng, Z. Ma, K. S. Yeo and K. Ma, "A 28/39 GHz Tri-Mode Frequency-Reconfigurable LNA for Multiband 5G Communications," in IEEE Transactions on Circuits and Systems II: Express Briefs, doi: 10.1109/TCSII.2024.3379230.
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- [3] Y. Luo, Y. Song, N. N. Yan, W. An, K. Ma and F. Meng, "Broadband and Gain-Enhanced Compressed Higher-Order-Mode Dipoles Using Parasitic Elements and Stubs to Modify Currents," in IEEE Transactions on Antennas and Propagation, vol. 72, no. 4, pp. 3819-3824, April 2024, doi: 10.1109/TAP.2024.3370368.
- [4] Z. Liu, Z. Zhao, Y. Kai, Y. Lao, J. Wang and F. Meng, "Comment on “Demonstration of Low dv/dt Class-Ф2 DC-DC Converter With 50% Duty Cycle”," in IEEE Transactions on Power Electronics, vol. 39, no. 5, pp. 5040-5040, May 2024, doi: 10.1109/TPEL.2024.3367991.
- [5] X. Zhang, N. Zhu and F. Meng, "A 185-to-240 GHz SiGe Power Amplifier Using Non-Zero Base-Impedances for Power Gain and Output Power Optimizations," in IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol. 14, no. 1, pp. 67-74, March 2024, doi: 10.1109/JETCAS.2024.3355011.
- [6] S. Ma, K. Wang, F. Meng and K. Ma, "A 2.4-GHz Class-AB FBAR-Based Low Phase Noise Oscillator Using Dynamic Tail-Current Biasing," in IEEE Microwave and Wireless Technology Letters, vol. 34, no. 2, pp. 225-228, Feb. 2024, doi: 10.1109/LMWT.2023.3345528.
- [7] G. Ma, Z. Yang and F. Meng, "An Ultracompact Frequency-Reconfigurable SPDT Switch With 42-dB Isolation," in IEEE Microwave and Wireless Technology Letters, vol. 34, no. 1, pp. 45-48, Jan. 2024, doi: 10.1109/LMWT.2023.3337849.
- [8] F. Meng, Y. Guo, K. Ma and Y. Luo, "A Terahertz Wide-Angle Beamsteering 3-D Printed Half-Compressed Elliptical Luneburg Lens With Planar Focal Plane," in IEEE Antennas and Wireless Propagation Letters, vol. 23, no. 2, pp. 843-847, Feb. 2024, doi: 10.1109/LAWP.2023.3337275.
- [9] Z. Zhao, X. Chen, F. Meng, K. Ma and K. S. Yeo, "A 211.4-to-234.8 GHz 25.6-dB Differential Amplifier With Compact Terminal Multi-Coupled and Auxiliary Interstage-Coupled Matching Networks," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 71, no. 3, pp. 1017-1021, March 2024, doi: 10.1109/TCSII.2023.3324259.
- [10] G. Ma, F. Meng, K. Wang, K. Ma and K. S. Yeo, "A S/C-Band 5-Bit Passive Attenuator With Phase-Lead Compensation in 55-nm Bulk CMOS," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 71, no. 3, pp. 1082-1085, March 2024, doi: 10.1109/TCSII.2023.3318608
- [11] L. Wang and F. Meng, "A D-Band 5-bit Active Phase Shifter Supporting Bi-Directional Operations in 65nm CMOS," 2023 16th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT), Guangzhou, China, 2023, pp. 1-3, doi: 10.1109/UCMMT58116.2023.10310634.
- [12] L. Wang and F. Meng, "A D-Band 5-bit Active Phase Shifter Supporting Bi-Directional Operations in 65nm CMOS," 2023 16th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT), Guangzhou, China, 2023, pp. 1-3, doi: 10.1109/UCMMT58116.2023.10310634.
- [13] L. Zhang, K. Ma, H. Fu, Y. Wang, K. Wang, F. Meng, and X. Li, "A Compact 140-GHz Power Amplifier With 15.4-dBm Psat and 14.25% Peaking PAE in 28-nm Bulk CMOS Process," IEEE Transactions on Microwave Theory and Techniques, doi: 10.1109/TMTT.2023.3322742.
- [14] Shen, H, Wang, Y, Meng, F, Ma, K. Slow-wave substrate integrated suspended parallel strip line and its application to rat-race coupler. Microw Opt Technol Lett. 2023; 65: 3196-3203. doi:10.1002/mop.33870
- [15] Shen, H., Wang, Y., Meng, F. and Ma, K. (2023), A compact differential branch-line coupler using folded substrate integrated suspended parallel strip line. Electron. Lett., 59: e13021. https://doi.org/10.1049/ell2.13021
- [16] Z. Miao, N. Zhu, Z. Yang, J. Li and F. Meng, "A W-Band High Isolation SPDT Switch Using Reverse-saturated 0.13μm SiGe HBTs," 2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT), Qingdao, China, 2023, pp. 1-4, doi: 10.1109/ICMMT58241.2023.10276706.
- [17] Z. Zhao, X. Chen, F. Meng, K. Ma and K. S. Yeo, "A 211.4-to-234.8 GHz 25.6-dB Differential Amplifier With Compact Terminal Multi-Coupled and Auxiliary Interstage-Coupled Matching Networks," IEEE Tran. Circuits and Systems II: Express Briefs, doi: 10.1109/TCSII.2023.3324259.
- [18] X. Wang et al., "An L-/S-Band SPDT Switch With 30-dBm OP1dB and 33-dB Isolation in CMOS SOI," IEEE Microwave and Wireless Technology Letters, doi: 10.1109/LMWT.2023.3313168.
- [19] Z. Liu, Z. Zhao, Y. Kai, Y. Lao, J. Wang and F. Meng, "Demonstration of Low dv/dt Class-Ф2 DC-DC Converter with 50% Duty Cycle," IEEE Transactions on Power Electronics, vol. 38, no. 12, pp. 15759-15767, Dec. 2023, doi: 10.1109/TPEL.2023.3314445.
- [20] Z. Yang, K. Ma, F. Meng and B. Liu, "A 120-GHz Class-F Frequency Doubler With 7.8-dBm POUT in 55-nm Bulk CMOS," IEEE Journal of Solid-State Circuits. doi: 10.1109/JSSC.2023.3253287. (IEEE JSSC 58, 2173-2188 (2023))
- [21] X. Li, K. Wang, Y. Zhou, Y. Pan, F. Meng and K. Ma, "A Wide Input Range All-NMOS Rectifier with Gate Voltage Boosting Technique for Wireless Power Transfer," IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 70, no. 11, pp. 4023-4027, June 2023. doi: 10.1109/TCSII.2023.3285620. (IEEE TCAS-II 70, 4023-4027 (2023))
- [22] Y. Luo, S. Zhao, N. Yan, W. An, K. Ma and F. Meng, "A Multi-Compressed-High-Order Modes Dipole Antenna with Wide-Beam and High-Gain Radiations in Two Different Bands," IEEE Antennas and Wireless Propagation Letters, doi: 10.1109/LAWP.2023.3237391. (IEEE AWPL Early Access, (2023))
- [23] Z. Liu, Z. Lin, J. Wang, K. Ma, D. Disney and F. Meng, "A Fully-Integrated Heterogenous Si-CMOS/GaN 500MHz 6V-to-18V Boost Converter Chip," IEEE Transactions on Power Electronics, vol. 38, no. 5, pp. 5615-5618, May 2023, doi: 10.1109/TPEL.2023.3236825. (IEEE TPE 38, 5615-5618, (2023))
- [24] Y. Zhang, N. Zhu, S. Bai and F. Meng, "A 220-GHz High Linearity Power Amplifier with 25.7-dB Gain and 9.7-dB PSAT," 2023 IEEE MTT-S International Wireless Symposium (IWS), Qingdao, China, 2023, pp. 1-4, doi: 10.1109/IWS58240.2023.10222902. (IWS2023 Flash Competition 最佳论文奖第二名)
- [25] G. Ma, X. Chen, X. Zhang, M. Bai and F. Meng, "A 0.3-7.7GHz Noise-Canceling Low-Noise Amplifier in 55nm CMOS," 2023 IEEE MTT-S International Wireless Symposium (IWS), Qingdao, China, 2023, pp. 1-4, doi: 10.1109/IWS58240.2023.10222271. (IWS2023多语种学生视频竞赛(MVC Competition)三等奖)
- [26] Y. Zhang, H. Wu, Z. Liu, L. Wang, Z. Li and F. Meng, "A SiGe 92–96 GHz 5-bit Active Phase Shifter for W-Band Phased Arrays," 2023 IEEE MTT-S International Wireless Symposium (IWS), Qingdao, China, 2023, pp. 1-3, doi: 10.1109/IWS58240.2023.10222268.
- [27] S. Fu, X. Tian, Z. Yang, Z. Zhao, Y. Cui and F. Meng, "A 94-GHz SiGe Power Amplifier With 18.5 dB Power Gain and 14.4 dBm PSAT," 2023 IEEE MTT-S International Wireless Symposium (IWS), Qingdao, China, 2023, pp. 1-4, doi: 10.1109/IWS58240.2023.10222899.
- [28] Z. Ma, Z. Ma, K. Ma, F. Meng and K. Wang, "A 28-GHz 26.8-dBm Doherty Power Amplifier With Four-Way Differential Hybrid Load-Modulated Combiner in 55-nm CMOS," IEEE Microwave and Wireless Technology Letters.
- [29] X. Wang et al., "An L-/S-Band SPDT Switch With 30-dBm OP1dB and 33-dB Isolation in CMOS SOI," IEEE Microwave and Wireless Technology Letters, doi: 10.1109/LMWT.2023.3313168.
- [30] G. Ma, F. Meng, K. Wang, K. Ma and K. S. Yeo, "A S/C-Band 5-Bit Passive Attenuator With Phase-Lead Compensation in 55nm Bulk CMOS," IEEE Transactions on Circuits and Systems II: Express Briefs, doi: 10.1109/TCSII.2023.3318608.
- [31] Z. Zhao, X. Chen, F. Meng, K. Ma and K. S. Yeo, "A 211.4-to-234.8 GHz 25.6-dB Differential Amplifier With Compact Terminal Multi-Coupled and Auxiliary Interstage-Coupled Matching Networks," IEEE Tran. Circuits and Systems II: Express Briefs, doi: 10.1109/TCSII.2023.3324259.
- [32] Z. Miao, N. Zhu, Z. Yang, J. Li and F. Meng, "A W-Band High Isolation SPDT Switch Using Reverse-saturated 0.13μm SiGe HBTs," 2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT), Qingdao, China, 2023, pp. 1-4, doi: 10.1109/ICMMT58241.2023.10276706.
- [33] L. Zhang et al., "A Compact 140-GHz Power Amplifier With 15.4-dBm Psat and 14.25% Peaking PAE in 28-nm Bulk CMOS Process," IEEE Transactions on Microwave Theory and Techniques, doi: 10.1109/TMTT.2023.3322742.
- [34] F. Meng, X. Chen, W. Xu and K. Ma, "Self-Packaged Low-Loss Low-Pass Filter With Hexagonal Suspended Toroidal Inductors," IEEE Microwave and Wireless Technology Letters, vol. 33, no. 2, pp. 137-140, Feb. 2023, doi: 10.1109/LMWC.2022.3204845.
- [35] Xiaoxu Tian, Nengxu Zhu, Zhiheng Liu, Fanyi Meng, "A Compact 210-to-250 GHz Quad-Stacked Power Amplifier in 0.13-μmSiGe BiCMOS", IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP 2022), 2022
- [36] Huiying Wu, Jinxin Li, Fanyi Meng, "A 220 GHz 5-Bit Phase Shifter with Low Phase-Error in 0.13μm BiCMOS Technology", IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP 2022), 2022
- [37] Man Bai, Xianghui Chen, Zenglong Zhao, Qingsong Zhao, Guiyue Mao, Wengan Li, Baijin Song, Fanyi Meng, "A Wideband Noise-Canceling Low Noise Amplifier Employing Current- Reuse and Negative Feedback Techniques", IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP 2022), 2022
- [38] N. Zhang, K. Ma, Y. Wang and F. Meng, "A 77-GHz Low-Conversion-Loss Fourth-Harmonic Mixer on SISL Platform", IEEE Microw. Wireless Compon. Lett., 2022
- [39] Z. Xu, F. Meng, K. Ma, H. Fu, X. Duan, M. Lu, Y. Bie, and J. Liu., "A 16-24-GHz SiGe Decibel-Linear Low-Gain-Error Digitally Controlled High-Efficiency Variable Gain Amplifier", IEEE Microw. Wireless Compon. Lett., 2022
- [40] Z. Liu, F. Meng, K. Ma, and K. S. Yeo, "Current Harmonics Analysis and Design for Load-Independent ZVS Single-Switch Resonant DC/DC Converter", IEEE Transactions on Power Electronics, 2022
- [41] N. Zhang, K. Ma, Y. Wang, and F. Meng, "A W-Band Broadband Self-Packaged Compact SISL Tripler using FR4 substrate", Microwave and Optical Technology Letters, 2022
- [42] H. Wu, H. Fu, F. Meng, and K. Ma, "Responsivity enhancement techniques for CMOS source‐driven terahertz detectors", Microwave and Optical Technology Letters, 2022
- [43] B. Liu, K, Ma, H. Fu, K. Wang, and F. Meng, "Recent Progress of Silicon-based Millimeter-wave SoCs for Short-Range Radar Imaging and Sensing Applications", IEEE Transactions on Circuits and Systems II: Express Briefs, 2022
- [44] Y. Wang, F. Meng, K. Ma, and M. Lu, "Design of a dB-Linear 21.5-to-36 GHz 6-Bit RF-VGA with Accurate Gain Control in 0.13-µm SiGe BiCMOS Technology", IEEE International Symposium on Circuits and Systems (ISCAS), 2022
- [45] A 190-to-220GHz 4-bit Passive Attenuator with 1.4dB Insertion Loss and Sub-0.4dB RMS Amplitude Error using Magnetically Switchable Coupled-Lines in 0.13-μm CMOS Technology
- [46] Z. Ma, K. Ma, K. Wang, and F. Meng, "A 28GHz Compact 3-Way Transformer-Based Parallel-Series Doherty Power Amplifier With 20.4%/14.2% PAE at 6-/12-dB Power Back-off and 25.5dBm P SAT in 55nm Bulk CMOS", ISSCC, 2022
- [47] F. Meng and N. Zhu, "An MSCL-Based Attenuator With Ultralow Insertion Loss and Intrinsic ESD-Protection for Millimeter-Wave and Terahertz Applications," IEEE Transactions on Microwave Theory and Techniques, vol. 71, no. 1, pp. 240-249, Jan. 2023, doi: 10.1109/TMTT.2022.3225318.
- Books
- [1] Fanyi Meng, Kaixue Ma, Kiat Seng Yeo, "Millimeter-Wave IC Design Techniques for Beam-Forming Applications", Lambert Publishing, 2016
- [2] Kiat-Seng Yeo, Chirn Chye Boon, Xiang Yi, Fanyi Meng, "CMOS Millimeter-Wave Integrated Circuits for Next Generation Wireless Communication Systems", World Scientific Publishing, 2018