天津大学教师个人主页系统孟凡易 Z. Zhao, X. Chen, F. Meng and K. Ma, "A 22.6-to-73.9 GHz Ultra-Wideband Low-Noise Amplifier With Flat In-band Power Gain in 0.13-µm BiCMOS Technology," 2024 IEEE MTT-S International Wireless Symposium (IWS), Beijing, China, 2024, pp. 1-3, doi: 10.1109/IWS61525.2024.10713824. Home

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孟凡易

School

School of Microelectronics

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Professor

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Circuits and Systems

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Selected Papers

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Z. Zhao, X. Chen, F. Meng and K. Ma, "A 22.6-to-73.9 GHz Ultra-Wideband Low-Noise Amplifier With Flat In-band Power Gain in 0.13-µm BiCMOS Technology," 2024 IEEE MTT-S International Wireless Symposium (IWS), Beijing, China, 2024, pp. 1-3, doi: 10.1109/IWS61525.2024.10713824.

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Pre One:Y. He, F. Meng, C. L. Kok and C. K. Ho, "A K-to-Ka Band Ultra Wideband Power Amplifier in 180-Nm SiGe Technology," 2024 IEEE International Conference on IC Design and Technology (ICICDT), Singapore, Singapore, 2024, pp. 1-4, doi: 10.1109/ICICDT63592.2024.10717834.

Next One:Mu, H., Ding, C., Yi, T., Wang, Y., Meng, F., & Wang, J. (2024). Tunable bandpass filter based on epsilon-near-zero metamaterials using liquid crystals. Liquid Crystals, 51(5), 773–782. https://doi.org/10.1080/02678292.2024.2325573