天津大学教师个人主页系统孟凡易 Y. He, F. Meng, C. L. Kok and C. K. Ho, "A K-to-Ka Band Ultra Wideband Power Amplifier in 180-Nm SiGe Technology," 2024 IEEE International Conference on IC Design and Technology (ICICDT), Singapore, Singapore, 2024, pp. 1-4, doi: 10.1109/ICICDT63592.2024.10717834. Home

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孟凡易

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School of Microelectronics

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Professor

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Circuits and Systems

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Selected Papers

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Y. He, F. Meng, C. L. Kok and C. K. Ho, "A K-to-Ka Band Ultra Wideband Power Amplifier in 180-Nm SiGe Technology," 2024 IEEE International Conference on IC Design and Technology (ICICDT), Singapore, Singapore, 2024, pp. 1-4, doi: 10.1109/ICICDT63592.2024.10717834.

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Pre One:Y. Zhou et al., "A Second-Order Noise Shaping SAR ADC With Parallel Multiresidual Integrator," IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 32, no. 11, pp. 2135-2138, Nov. 2024, doi: 10.1109/TVLSI.2024.3447740.

Next One:Z. Zhao, X. Chen, F. Meng and K. Ma, "A 22.6-to-73.9 GHz Ultra-Wideband Low-Noise Amplifier With Flat In-band Power Gain in 0.13-µm BiCMOS Technology," 2024 IEEE MTT-S International Wireless Symposium (IWS), Beijing, China, 2024, pp. 1-3, doi: 10.1109/IWS61525.2024.10713824.