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Liu Xinjun

School

School of Science

Professional Title

Associate professor

Discipline

Materials Physics and Chemistry

Other Contact Information

Patents

Current position: Personal Profile > Academic Achievements > Patents

Resistance change memory device having threshold switching and memory switching characteristics, method of fabricating the same, and resistance change memory device including the same

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Patent Applicant:H. Hwang, S. Kim, X. Liu

Description of the Invention:US 9269901 B2, Publication date on Feb. 23, 2016.

Type of Patent:PCT or foreign applications

Type of Patent:Authorized patents

Service Invention or Not:no

Pre One:Resistive RAM, method for fabricating the same, and method for driving the same

Address: No. 92, Weijin Road, Nankai District, Tianjin Zip Code: 300072

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