天津大学教师个人主页系统刘新军 Resistive RAM, method for fabricating the same, and method for driving the same Personal Profile

中文

Brief Introduction
Education Background
Research Interests
Courses
Professional Membership
Positions & Employments
Academic achievements
Honors & Awards
Team
Album

Liu Xinjun

School

School of Science

Professional Title

Associate professor

Discipline

Materials Physics and Chemistry

Other Contact Information

Patents

Current position: Personal Profile > Academic Achievements > Patents

Resistive RAM, method for fabricating the same, and method for driving the same

Hits:

Patent Applicant:H. Hwang, X. Liu, M. Son

Description of the Invention:US 9214631 B2, Publication date on Dec. 15, 2015

Type of Patent:PCT or foreign applications

Type of Patent:Authorized patents

Service Invention or Not:no

Pre One:Adjusting and controlling methods of multiform resistance switching effects in multi-layer film structure for resistance random access memory

Next One:Resistance change memory device having threshold switching and memory switching characteristics, method of fabricating the same, and resistance change memory device including the same