Liang Shixiong
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Professional Title
Professor
Discipline
电子科学与技术
Contact Information
- E-mail：
- Selected Papers
- Yazhou Dong , Jun Zhou , Huajie Liang , Tianchi Zhou , Member, IEEE, Shuhan Zhou, Xuan Zeng, Shixiong Liang , Guodong Gu, Lisen Zhang, Zhihong Feng, Hongqiang Wang, Qi Yang, Ziqiang Yang , and Yaxin Zhang , Member, IEEE.Dong Y, Zhou J, Liang H, et al. A New Generation GaN/SiC Monolithically Integrated Frequency Sources With Ultrahigh-Power Output Based on Thermal Resistance Calculation Model[J]. IEEE Transactions on Microwave Theory and Techniques, 2025.（IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,中科院一区）.IEEE Transactuons on Microwave Theory And Techniqu
- Hongxin Zeng ;Huajie Liang ; Yaxin Zhang ;Lan Wang;Shixiong Liang ; Sen Gong; Zheng Li; Ziqiang Yang;Xilin Zhang;Feng Lan;Zhihong Feng3 ;Yubin Gong;Ziqiang Yang; Daniel M. Mittleman.Zeng H, Liang H, Zhang Y, et al. High-precision digital terahertz phase manipulation within a multichannel field perturbation coding chip[J]. Nature Photonics, 2021, 15(10):751-757,（NATURE PHOTONICS,中科院一区）（影响因子:32.3, 引用次数：90次）.Nature Photonics
- Shixiong Liang, Guodong Gu, Hongyu Guo, Lisen Zhang, Xubo Song, Yuanjie Lv, Aimin Bu ,Zhihong Feng.Liang S, Gu G, Guo H, et al. Homoepitaxial GaN terahertz planar Schottky barrier diodes[J]. Journal of Physics D: Applied Physics, 2022, 55(48): 484004.(JOURNAL OF PHYSICS D-APPLIED PHYSICS,中科院三区).IOP Publishing
- Hongxin Zeng; Sen Gong; Lan Wang;Kesen Ding;Huajie Liang;Feng Lan;Tianchi Zhou; Shixiong Liang;Wei Wang;Yubin Gong;Ziqiang Yan;Tie Jun Cui;Yaxin Zhang.Zeng H, Gong S, Wang L, et al. High‐speed modulations of guided terahertz waves via 2DEG tiny metasurfaces[J]. Laser & Photonics Reviews, 2023, 17(9): 2300122.(LASER & PHOTONICS REVIEWS，中科院一区).Laser and Photonics Rrviews
- Kou Wei;Liang Shixiong;Zhou Hongji;Dong Yazhou;Gong Sen;Yang Ziqiang; Zeng Hongxin.KOU W, LIANG S, ZHOU H, et al. A review of terahertz sources based on planar Schottky diodes[J]. Chinese Journal of Electronics, 2022, 31(3): 467-487.(CHINESE JOURNAL OF ELECTRONICS,中科院三区).Chinese Journal of Electronics
- Xubo Song, Shixiong Liang , Yuanjie Lv , Zhenpeng Zhang, Lisen Zhang, Xingchang Fu, Yanmin Guo, Guodong Gu, Yuangang Wang , Yuan Fang, Aimin Bu, Shujun Cai , Member, IEEE, and Zhihong Feng.Song X, Liang S, Lv Y, et al. GaN-based frequency doubler with pulsed output power over 1 W at 216 GHz[J]. IEEE Electron Device Letters, 2021, 42(12): 1739-1742.(IEEE ELECTRON DEVICE LETTERS,中科院二区).IEEE Electron Device Letters
- Yuncheng Zhao, Yaxin Zhang,Qiwu Shi,Shixiong Liang,Wanxia Huang,Wei Kou,Ziqiang Yang.Zhao Y, Zhang Y, Shi Q, et al. Dynamic photoinduced controlling of the large phase shift of terahertz waves via vanadium dioxide coupling nanostructures[J]. Acs Photonics, 2018, 5(8): 3040-3050,(ACS PHOTONICS,中科院一区,（引用次数：148次).Univ Electronic SCI ;Techlgy China
- Bo Zhang , Senior Member, IEEE, Dongfeng Ji , Deng Fang, Shixiong Liang, Yong Fan, Member, IEEE, and Xiaodong Chen , Fellow, IEEE.Zhang B, Ji D, Fang D, et al. A novel 220-GHz GaN diode on-chip tripler with high driven power[J]. IEEE Electron Device Letters, 2019, 40(5): 780-783,95Citations(IEEE ELECTRON DEVICE LETTERS,中科院二区（引用次数：107次).IEEE Electron Devlce Letters
- Lisen Zhang, Shixiong Liang , Yuanjie Lv , Dabao Yang, Xingchang Fu, Xubo Song, Guodong Gu, Peng Xu, Yanmin Guo, Aimin Bu, Zhihong Feng , and Shujun Cai , Member, IEEE.Zhang L, Liang S, Lv Y, et al. High-power 300 GHz solid-state source chain based on GaN doublers[J]. IEEE Electron Device Letters, 2021, 42(11): 1588-1591.(IEEE ELECTRON DEVICE LETTERS,中科院二区).IEEE Electron Device Letters
- Shixiong Liang , Xubo Song, Lisen Zhang, Yuanjie Lv , Yuangang Wang , Bihua Wei, Yanmin Guo, Guodong Gu, Bo Wang, Shujun Cai , Member, IEEE, and Zhihong Feng.Liang S, Song X, Zhang L, et al. A 177–183 GHz high-power GaN-based frequency doubler with over 200 mW output power[J]. IEEE Electron Device Letters, 2020, 41(5): 669-672.(IEEE ELECTRON DEVICE LETTERS,中科院二区).IEEE Electron Device Letters