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刘新军

  • 教师名称:刘新军
  • 教师拼音名称:Liu Xinjun
  • 出生日期:1980-10-04
  • 性别:
  • 学科:Materials Physics and Chemistry
  • 职称:副教授

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Homogeneous structure transparent RRAM components of zinc oxide-based and preparation technique

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申请专利人:X. Li, X. Cao, W. Yu, C. Yang, Y. Zhang, X. Liu, a

专利说明:China patent CN101533890, Granted on Dec. 14, 2011 (No. 200910048825.X)

专利类型:Invent

专利状态:Authorized patents

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上一篇:Electrical pulse induced resistance change characterization for binary oxide RRAM memory cells 下一篇:Adjusting and controlling methods of multiform resistance switching effects in multi-layer film structure for resistance random access memory

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