Liu Xinjun
School
School of Science
Professional Title
Associate professor
Discipline
Materials Physics and Chemistry
Contact Information
15802261092
xinjun.liu@tju.edu.cn
Department of Physics, School of Science, Tianjin University, 135 Yaguan Road, Jinnan District, Tianjin 300350, China
Education Background
- B. Sc. | Department of Physics, Shanxi University| Materials Physics| 2001
- M.Sc.| Department of Physics, Tianjin University| Materials Physics and Chemistry| 2004
- Ph.D.| Department of Physics, Tianjin University| Materials Physics and Chemistry| 2007
Research Interests
- Switching mechanism of resistive memory and controllable memristor
- Neuronal solid state devices based on negative differential resistance effects
- Mechanism and application in niobium oxide with metal-insulator transition
Courses
Positions & Employments
-
2013.4-2017.1
The Australian National University (ANU), Canberra, Australia -
2017.3-2019.12
Department of Physics, School of Science, Tianjin University, Tianjin, China -
2007.11-2013.3
Gwangju Institute of Science and Technology (GIST), Gwangju, Republic of Korea -
2007.8-2009.10
Shanghai Institute of Ceramics, Chinese Academy of Science (SICCAS), Shanghai, China | Post-doctoral
Academic Achievements
- Papers
- [1] Current localisation and redistribution as the basis of discontinuous current controlled negative differential resistance in NbOx
- [2] Collective dynamics of capacitively coupled oscillators based on NbO2 memristors
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- [3] Origin of current-controlled negative differential resistance modes and the emergence of composite characteristics with high complexity
- [4] Anatomy of filamentary threshold switching in amorphous niobium oxide
- [5] Temperature dependent frequency tuning of NbOx relaxation oscillators
- [6] Coupling dynamics of Nb/Nb2O5 relaxation oscillators
- [7] Threshold Switching and Electrical Self-Oscillation in Niobium Oxide Films
- [8] Self-assembly of an NbO2 interlayer and configurable resistive switching in Pt/Nb/HfO2/Pt structures
- [9] High-endurance megahertz electrical self-oscillations in Ti/NbOx bilayer structures
- [10] Effect of Electrode Roughness on Electroforming in HfO2 and Defect-Induced Moderation of Electric-Field Enhancement
- [11] Threshold current reduction for the metal-insulator transition in NbO2-x-selector devices –the effect of ReRAM integration
- Patents
- [1] Electrical pulse induced resistance change characterization for binary oxide RRAM memory cells
- [2] Homogeneous structure transparent RRAM components of zinc oxide-based and preparation technique
-
- [3] Adjusting and controlling methods of multiform resistance switching effects in multi-layer film structure for resistance random access memory
- [4] Resistive RAM, method for fabricating the same, and method for driving the same
- [5] Resistance change memory device having threshold switching and memory switching characteristics, method of fabricating the same, and resistance change memory device including the same
Team
Neuron Network
Investigate the dynamics of neuron network based on the properties of S-type negative differential resistance (NDR) in niobium oxides.
