A 190-to-220GHz 4-bit Passive Attenuator with 1.4dB Insertion Loss and Sub-0.4dB RMS Amplitude Error using Magnetically Switchable Coupled-Lines in 0.13-μm CMOS Technology
点击次数:
- 发表刊物:IEEE International Microwave Symposium (IMS)
- 合写作者:N. Zhu and F. Meng
- 是否译文:否
- CN号:null
上一条:Y. Wang, F. Meng, K. Ma, and M. Lu, "Design of a dB-Linear 21.5-to-36 GHz 6-Bit RF-VGA with Accurate Gain Control in 0.13-µm SiGe BiCMOS Technology", IEEE International Symposium on Circuits and Systems (ISCAS), 2022
下一条:Z. Ma, K. Ma, K. Wang, and F. Meng, "A 28GHz Compact 3-Way Transformer-Based Parallel-Series Doherty Power Amplifier With 20.4%/14.2% PAE at 6-/12-dB Power Back-off and 25.5dBm P SAT in 55nm Bulk CMOS", ISSCC, 2022
