School of Microelectronics
Professor
Circuits and Systems
mengfanyi@tju.edu.cn
Dr. Meng Fanyi is a full professor at the School of Microelectronics at Tianjin University, a senior member of IEEE, awarded the national level young talent program, the chief of the National Key R&D Program for Young Scientists, a special expert of the China Association for Science and Technology's Haizhi Program, and a member of the Executive Committee of Engineering Education of the Asia Pacific Federation of Engineering Organizations (FEIAP). His research interests are CMOS RF/mmW integrated circuits and Si-CMOS/GaN heterojunction integrated circuits and systems. He published over 100 peer-reviewed papers, wrote 2 English monographs, and served as the Associate Editor of IEEE TCAS-II ('23-'24). In 2020, he was awarded the title of Excellent Science and Technology Worker by the China Electronics Society.
- Doctoral degree| Nanyang Technological University| 集成电路设计
- Bachelor Degree| Nanyang Technological University| 集成电路设计
- Si-CMOS/GaN Heterogenous Integrated Circuits and Systems
- CMOS/SiGe mmWave/THz Integrated Circuits and Systems
- Papers
- [1] K. Ma, Y. Luo, H. Zheng, F. Feng and F. Meng, "Recent Educational Events Organized by the IEEE Tianjin AP-S/MTT-S/SSCS Chapter [Chapters]," IEEE Solid-State Circuits Magazine, vol. 16, no. 2, pp. 107-107, Spring 2024, doi: 10.1109/MSSC.2024.3389368.
- [2] Li, Z., Lin, Z., Meng, F. (2024). A Single Active Phase Hybrid Buck Converter with Reduced Voltage Stress and Wide Voltage Conversion Ratios for Integrated Terahertz Systems. In: Chang, C., Zhang, Y., Zhao, Z., Zhu, Y. (eds) Proceedings of the 5th China and International Young Scientist Terahertz Conference, Volume 2. YTHZ 2024. Springer Proceedings in Physics, vol 401. Springer, Singapore. https://doi.org/10.1007/978-981-97-3913-4_39
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- [3] Kai, Y., Zhao, Z., Liu, Z., Meng, F. (2024). A 100 MHz Class-E Converter with Switchable-Coupled-Inductor Control for Terahertz System. In: Chang, C., Zhang, Y., Zhao, Z., Zhu, Y. (eds) Proceedings of the 5th China and International Young Scientist Terahertz Conference, Volume 2. YTHZ 2024. Springer Proceedings in Physics, vol 401. Springer, Singapore. https://doi.org/10.1007/978-981-97-3913-4_23
- [4] K. Xie, R. Wu, F. Meng, K. Ma, K. S. Yeo and K. Wang, "Design and Analysis of Ka-Band Power Amplifier With Sandwiched-Coupler-Balun and Folded-T-Line Power Combiner," IEEE Transactions on Microwave Theory and Techniques, doi: 10.1109/TMTT.2024.3465932.
- [5] H. Shen, F. Meng, Y. Wang and K. Ma, "Self-Packaged Slow-Wave Metal Integrated Coplanar Waveguide (MICPW) for Compact Branch-Line Coupler Design," IEEE Transactions on Components, Packaging and Manufacturing Technology, doi: 10.1109/TCPMT.2024.3470796.
- [6] Y. Shi, C. Yang, J. Wang, Y. Zheng and F. Meng, "A Near-Real-Time Forecasting Model of High-Frequency Radiowave Propagation Factor Fusion Based on the ICEEMDAN Decomposition and Bi-LSTM Methods," IEEE Transactions on Antennas and Propagation, vol. 72, no. 7, pp. 6032-6044, July 2024, doi: 10.1109/TAP.2024.3413298.
- [7] Y. He, K. Ma, B. Liu, Y. Wang, N. Yan and F. Meng, "Analysis and Design of the SISL Waveguide Filter With Co-Designed Electric-Coupled SISL Resonators for Ku-Band Applications," IEEE Transactions on Microwave Theory and Techniques, vol. 72, no. 11, pp. 6637-6647, Nov. 2024, doi: 10.1109/TMTT.2024.3399127.
- [8] W. Li, F. Meng, C. L. Kok and C. K. Ho, "A 1MHz, 93.7% Peak Efficiency, Heterogenous GaN/BCD 48-to-3.3V~5V DC-DC Buck Converter," 2024 IEEE International Conference on IC Design and Technology (ICICDT), Singapore, Singapore, 2024, pp. 1-4, doi: 10.1109/ICICDT63592.2024.10717805.
- [9] J. Zhao, P. Li, F. Meng and K. Ma, "An Ultra-Compact 78.5-to-96.5 GHz Power Amplifier with 14.5 dBm PSAT and 20.5% PAE in 65nm Bulk CMOS," 2024 IEEE MTT-S International Wireless Symposium (IWS), Beijing, China, 2024, pp. 1-3, doi: 10.1109/IWS61525.2024.10713798. (IWS 2024 Flash Competition三等奖)
- [10] Y. Zhou et al., "A Second-Order Noise Shaping SAR ADC With Parallel Multiresidual Integrator," IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 32, no. 11, pp. 2135-2138, Nov. 2024, doi: 10.1109/TVLSI.2024.3447740.
- [11] Y. He, F. Meng, C. L. Kok and C. K. Ho, "A K-to-Ka Band Ultra Wideband Power Amplifier in 180-Nm SiGe Technology," 2024 IEEE International Conference on IC Design and Technology (ICICDT), Singapore, Singapore, 2024, pp. 1-4, doi: 10.1109/ICICDT63592.2024.10717834.
- [12] Z. Zhao, X. Chen, F. Meng and K. Ma, "A 22.6-to-73.9 GHz Ultra-Wideband Low-Noise Amplifier With Flat In-band Power Gain in 0.13-µm BiCMOS Technology," 2024 IEEE MTT-S International Wireless Symposium (IWS), Beijing, China, 2024, pp. 1-3, doi: 10.1109/IWS61525.2024.10713824.
- [13] Mu, H., Ding, C., Yi, T., Wang, Y., Meng, F., & Wang, J. (2024). Tunable bandpass filter based on epsilon-near-zero metamaterials using liquid crystals. Liquid Crystals, 51(5), 773–782. https://doi.org/10.1080/02678292.2024.2325573
- [14] Y. Guo, F. Meng, K. Ma, F. Feng and Y. Luo, "A Terahertz Wide-Angle Beam Steering Planar Double-Layers Lens," 2024 17th United Conference on Millemetre Waves and Terahertz Technologies (UCMMT), Palermo, Italy, 2024, pp. 70-73, doi: 10.1109/UCMMT62975.2024.10737834.
- [15] S. Zeng, Y. Cui, S. Bai, M. Luo and F. Meng, "A DC-54 GHz 5-bit Attenuator with Sub-0.35 dB/2.9° RMS Amplitude/Phase Errors in 0.18-μm SiGe BiCMOS," 2024 IEEE MTT-S International Wireless Symposium (IWS), Beijing, China, 2024, pp. 1-3, doi: 10.1109/IWS61525.2024.10713533.
- [16] N. Zhu, Y. Zhang and F. Meng, "A Tricoupled Resonant-Based Terahertz Switch Utilizing Tail-Transmission-Line with Ultra-Low Insertion Loss and Intrinsic ESD-Protection," IEEE Transactions on Terahertz Science and Technology, vol. 14, no. 6, pp. 884-887, Nov. 2024, doi: 10.1109/TTHZ.2024.3451625.
- [17] S. Bai, Y. Cui, M. Luo, S. Zeng and F. Meng, "A 5-18 GHz 6-bit Active Phase Shifter with Transformer-based Quadrature Poly-phase Networks in 0.18 µm SiGe BiCMOS," 2024 IEEE MTT-S International Wireless Symposium (IWS), Beijing, China, 2024, pp. 1-3, doi: 10.1109/IWS61525.2024.10713735.
- [18] Z. Miao, G. Ma, K. Wang and F. Meng, "A DC-to-8 GHz 60-dB Isolation SPDT Switch with Auxiliary Path Cancellation in 65-nm Bulk CMOS," 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024, Washington, DC, USA, 2024, pp. 1069-1072, doi: 10.1109/IMS40175.2024.10600428.
- [19] Z. Yang, F. Meng, B. Liu and K. Ma, "A 170-GHz Cascode Frequency Doubler With 15.6-dBm POUT in 130-nm SiGe BiCMOS," IEEE Transactions on Terahertz Science and Technology, vol. 14, no. 5, pp. 774-778, Sept. 2024, doi: 10.1109/TTHZ.2024.3435461.
- [20] M. Luo, Y. Cui, S. Bai, S. Zeng and F. Meng, "Design of a 2-18 GHz Differential Phase Invariant Low Noise Variable Gain Amplifier in 0.18-μm SiGe BiCMOS Technology," 2024 IEEE MTT-S International Wireless Symposium (IWS), Beijing, China, 2024, pp. 1-3, doi: 10.1109/IWS61525.2024.10713717.
- [21] Yan Kai, Ziheng Liu, Zenglong Zhao, Fanyi Meng, Switchable-coupled-inductor input-regulated Class-E converter at fixed 50%-duty-cycle 1-MHz switching signal, Microelectronics Journal, vol. 149, 2024, doi.org/10.1016/j.mejo.2024.106219.
- [22] G. Mao and F. Meng, "A 18-to-22 GHz 22.8 dBm PSAT 18.2 dB Gain Power Amplifier in 0.13-μm CMOS SOI," 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM), Hong Kong, 2024, pp. 231-233, doi: 10.1109/GSMM61775.2024.10553183.
- [23] Y. Cui, S. Bai, M. Luo, S. Zeng and F. Meng, "A 0.5~22.4 GHz Ultra-Wideband LNA Using Pole Staggering Bandwidth Extension Technology in 0.18 μm BiCMOS," 2024 IEEE MTT-S International Wireless Symposium (IWS), Beijing, China, 2024, pp. 1-3, doi: 10.1109/IWS61525.2024.10713603.
- [24] Yafei Shi, Cheng Yang, Jian Wang, Fanyi Meng, A hybrid deep learning-based short-term forecast model for ionospheric foF2 in East Asia region, Advances in Space Research, doi.org/10.1016/j.asr.2024.09.062.
- [25] N. Zhu, Y. Zhang, Z. Yang, Z. Zhao, H. Ye and F. Meng, "Analysis and Design of Tri-Coupled-Line-Based Attenuator for Miniaturized Terahertz Integrated Systems," IEEE Transactions on Microwave Theory and Techniques, doi: 10.1109/TMTT.2024.3487900.
- [26] Z. Liu, J. Gao, J. He, H. Peng, J. Wang and F. Meng, "Dual-Band Multi-Resonant Class-E Inverter With Load-Independent CC/CV Output," IEEE Transactions on Circuits and Systems I: Regular Papers, doi: 10.1109/TCSI.2024.3481905.
- [27] Y. Zhang, N. Zhu, Z. Yang and F. Meng, "A 100-GHz Power Amplifier With 21%/40.5% 1-/3-dB FBW and 15.1-dBm PSAT Using Pole-Tuning Interstage Matching Network in 65-nm CMOS," IEEE Microwave and Wireless Technology Letters, doi: 10.1109/LMWT.2024.3473932.
- [28] Z. Ma, i. T. Liu, F. Meng, K. Wang, Y. Luo and K. Ma, "A Compact Doherty-Like Load-Modulated Coupled Amplifier (LMCA) for 5G Phased-Array Applications," IEEE Transactions on Microwave Theory and Techniques, doi: 10.1109/TMTT.2024.3495692.
- [29] N. Zhu, J. Li, Y. Zhang, Z. Yang and F. Meng, "A Miniaturized DC-110-GHz Attenuator Using Inductive π -Type Topology in 0.13- μ m CMOS SOI," IEEE Microwave and Wireless Technology Letters, doi: 10.1109/LMWT.2024.3507180.
- [30] G. Ma and F. Meng, "A S-/ C -Band 6-bit Passive Phase Shifter With an X-Shape Merged 180° and 90° Cell," IEEE Microwave and Wireless Technology Letters, doi: 10.1109/LMWT.2024.3511920.
- [31] Y. Zhou, K. Wang, S. Yin, W.-Y. Li, F. Meng, Z.-G. Wang, K. Ma, "A Fully Integrated Stimulator With High Stimulation Voltage Compliance Using Dynamic Bulk Biasing Technique in a Bulk CMOS Technology," in IEEE Transactions on Circuits and Systems I: Regular Papers, doi: 10.1109/TCSI.2024.3376370.
- [32] B. Liu, F. Meng, Z. Ma, K. S. Yeo and K. Ma, "A 28/39 GHz Tri-Mode Frequency-Reconfigurable LNA for Multiband 5G Communications," in IEEE Transactions on Circuits and Systems II: Express Briefs, doi: 10.1109/TCSII.2024.3379230.
- [33] Y. Luo, Y. Song, N. N. Yan, W. An, K. Ma and F. Meng, "Broadband and Gain-Enhanced Compressed Higher-Order-Mode Dipoles Using Parasitic Elements and Stubs to Modify Currents," in IEEE Transactions on Antennas and Propagation, vol. 72, no. 4, pp. 3819-3824, April 2024, doi: 10.1109/TAP.2024.3370368.
- [34] Z. Liu, Z. Zhao, Y. Kai, Y. Lao, J. Wang and F. Meng, "Comment on “Demonstration of Low dv/dt Class-Ф2 DC-DC Converter With 50% Duty Cycle”," in IEEE Transactions on Power Electronics, vol. 39, no. 5, pp. 5040-5040, May 2024, doi: 10.1109/TPEL.2024.3367991.
- [35] X. Zhang, N. Zhu and F. Meng, "A 185-to-240 GHz SiGe Power Amplifier Using Non-Zero Base-Impedances for Power Gain and Output Power Optimizations," in IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol. 14, no. 1, pp. 67-74, March 2024, doi: 10.1109/JETCAS.2024.3355011.
- [36] S. Ma, K. Wang, F. Meng and K. Ma, "A 2.4-GHz Class-AB FBAR-Based Low Phase Noise Oscillator Using Dynamic Tail-Current Biasing," in IEEE Microwave and Wireless Technology Letters, vol. 34, no. 2, pp. 225-228, Feb. 2024, doi: 10.1109/LMWT.2023.3345528.
- [37] G. Ma, Z. Yang and F. Meng, "An Ultracompact Frequency-Reconfigurable SPDT Switch With 42-dB Isolation," in IEEE Microwave and Wireless Technology Letters, vol. 34, no. 1, pp. 45-48, Jan. 2024, doi: 10.1109/LMWT.2023.3337849.
- [38] F. Meng, Y. Guo, K. Ma and Y. Luo, "A Terahertz Wide-Angle Beamsteering 3-D Printed Half-Compressed Elliptical Luneburg Lens With Planar Focal Plane," in IEEE Antennas and Wireless Propagation Letters, vol. 23, no. 2, pp. 843-847, Feb. 2024, doi: 10.1109/LAWP.2023.3337275.
- [39] Z. Zhao, X. Chen, F. Meng, K. Ma and K. S. Yeo, "A 211.4-to-234.8 GHz 25.6-dB Differential Amplifier With Compact Terminal Multi-Coupled and Auxiliary Interstage-Coupled Matching Networks," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 71, no. 3, pp. 1017-1021, March 2024, doi: 10.1109/TCSII.2023.3324259.
- [40] G. Ma, F. Meng, K. Wang, K. Ma and K. S. Yeo, "A S/C-Band 5-Bit Passive Attenuator With Phase-Lead Compensation in 55-nm Bulk CMOS," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 71, no. 3, pp. 1082-1085, March 2024, doi: 10.1109/TCSII.2023.3318608
- [41] L. Wang and F. Meng, "A D-Band 5-bit Active Phase Shifter Supporting Bi-Directional Operations in 65nm CMOS," 2023 16th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT), Guangzhou, China, 2023, pp. 1-3, doi: 10.1109/UCMMT58116.2023.10310634.
- [42] L. Zhang, K. Ma, H. Fu, Y. Wang, K. Wang, F. Meng, and X. Li, "A Compact 140-GHz Power Amplifier With 15.4-dBm Psat and 14.25% Peaking PAE in 28-nm Bulk CMOS Process," IEEE Transactions on Microwave Theory and Techniques, doi: 10.1109/TMTT.2023.3322742.
- [43] Shen, H, Wang, Y, Meng, F, Ma, K. Slow-wave substrate integrated suspended parallel strip line and its application to rat-race coupler. Microw Opt Technol Lett. 2023; 65: 3196-3203. doi:10.1002/mop.33870
- [44] Shen, H., Wang, Y., Meng, F. and Ma, K. (2023), A compact differential branch-line coupler using folded substrate integrated suspended parallel strip line. Electron. Lett., 59: e13021. https://doi.org/10.1049/ell2.13021
- [45] Z. Miao, N. Zhu, Z. Yang, J. Li and F. Meng, "A W-Band High Isolation SPDT Switch Using Reverse-saturated 0.13μm SiGe HBTs," 2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT), Qingdao, China, 2023, pp. 1-4, doi: 10.1109/ICMMT58241.2023.10276706.
- [46] Z. Zhao, X. Chen, F. Meng, K. Ma and K. S. Yeo, "A 211.4-to-234.8 GHz 25.6-dB Differential Amplifier With Compact Terminal Multi-Coupled and Auxiliary Interstage-Coupled Matching Networks," IEEE Tran. Circuits and Systems II: Express Briefs, doi: 10.1109/TCSII.2023.3324259.
- [47] X. Wang et al., "An L-/S-Band SPDT Switch With 30-dBm OP1dB and 33-dB Isolation in CMOS SOI," IEEE Microwave and Wireless Technology Letters, doi: 10.1109/LMWT.2023.3313168.
- [48] Z. Liu, Z. Zhao, Y. Kai, Y. Lao, J. Wang and F. Meng, "Demonstration of Low dv/dt Class-Ф2 DC-DC Converter with 50% Duty Cycle," IEEE Transactions on Power Electronics, vol. 38, no. 12, pp. 15759-15767, Dec. 2023, doi: 10.1109/TPEL.2023.3314445.
- [49] Z. Yang, K. Ma, F. Meng and B. Liu, "A 120-GHz Class-F Frequency Doubler With 7.8-dBm POUT in 55-nm Bulk CMOS," IEEE Journal of Solid-State Circuits. doi: 10.1109/JSSC.2023.3253287. (IEEE JSSC 58, 2173-2188 (2023))
- [50] X. Li, K. Wang, Y. Zhou, Y. Pan, F. Meng and K. Ma, "A Wide Input Range All-NMOS Rectifier with Gate Voltage Boosting Technique for Wireless Power Transfer," IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 70, no. 11, pp. 4023-4027, June 2023. doi: 10.1109/TCSII.2023.3285620. (IEEE TCAS-II 70, 4023-4027 (2023))
- [51] Y. Luo, S. Zhao, N. Yan, W. An, K. Ma and F. Meng, "A Multi-Compressed-High-Order Modes Dipole Antenna with Wide-Beam and High-Gain Radiations in Two Different Bands," IEEE Antennas and Wireless Propagation Letters, doi: 10.1109/LAWP.2023.3237391. (IEEE AWPL Early Access, (2023))
- [52] Z. Liu, Z. Lin, J. Wang, K. Ma, D. Disney and F. Meng, "A Fully-Integrated Heterogenous Si-CMOS/GaN 500MHz 6V-to-18V Boost Converter Chip," IEEE Transactions on Power Electronics, vol. 38, no. 5, pp. 5615-5618, May 2023, doi: 10.1109/TPEL.2023.3236825. (IEEE TPE 38, 5615-5618, (2023))
- [53] Y. Zhang, N. Zhu, S. Bai and F. Meng, "A 220-GHz High Linearity Power Amplifier with 25.7-dB Gain and 9.7-dB PSAT," 2023 IEEE MTT-S International Wireless Symposium (IWS), Qingdao, China, 2023, pp. 1-4, doi: 10.1109/IWS58240.2023.10222902. (IWS2023 Flash Competition 最佳论文奖第二名)
- [54] G. Ma, X. Chen, X. Zhang, M. Bai and F. Meng, "A 0.3-7.7GHz Noise-Canceling Low-Noise Amplifier in 55nm CMOS," 2023 IEEE MTT-S International Wireless Symposium (IWS), Qingdao, China, 2023, pp. 1-4, doi: 10.1109/IWS58240.2023.10222271. (IWS2023多语种学生视频竞赛(MVC Competition)三等奖)
- [55] Y. Zhang, H. Wu, Z. Liu, L. Wang, Z. Li and F. Meng, "A SiGe 92–96 GHz 5-bit Active Phase Shifter for W-Band Phased Arrays," 2023 IEEE MTT-S International Wireless Symposium (IWS), Qingdao, China, 2023, pp. 1-3, doi: 10.1109/IWS58240.2023.10222268.
- [56] S. Fu, X. Tian, Z. Yang, Z. Zhao, Y. Cui and F. Meng, "A 94-GHz SiGe Power Amplifier With 18.5 dB Power Gain and 14.4 dBm PSAT," 2023 IEEE MTT-S International Wireless Symposium (IWS), Qingdao, China, 2023, pp. 1-4, doi: 10.1109/IWS58240.2023.10222899.
- [57] Z. Ma, Z. Ma, K. Ma, F. Meng and K. Wang, "A 28-GHz 26.8-dBm Doherty Power Amplifier With Four-Way Differential Hybrid Load-Modulated Combiner in 55-nm CMOS," IEEE Microwave and Wireless Technology Letters.
- [58] X. Wang et al., "An L-/S-Band SPDT Switch With 30-dBm OP1dB and 33-dB Isolation in CMOS SOI," IEEE Microwave and Wireless Technology Letters, doi: 10.1109/LMWT.2023.3313168.
- [59] G. Ma, F. Meng, K. Wang, K. Ma and K. S. Yeo, "A S/C-Band 5-Bit Passive Attenuator With Phase-Lead Compensation in 55nm Bulk CMOS," IEEE Transactions on Circuits and Systems II: Express Briefs, doi: 10.1109/TCSII.2023.3318608.
- [60] Z. Zhao, X. Chen, F. Meng, K. Ma and K. S. Yeo, "A 211.4-to-234.8 GHz 25.6-dB Differential Amplifier With Compact Terminal Multi-Coupled and Auxiliary Interstage-Coupled Matching Networks," IEEE Tran. Circuits and Systems II: Express Briefs, doi: 10.1109/TCSII.2023.3324259.
- [61] Z. Miao, N. Zhu, Z. Yang, J. Li and F. Meng, "A W-Band High Isolation SPDT Switch Using Reverse-saturated 0.13μm SiGe HBTs," 2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT), Qingdao, China, 2023, pp. 1-4, doi: 10.1109/ICMMT58241.2023.10276706.
- [62] L. Zhang et al., "A Compact 140-GHz Power Amplifier With 15.4-dBm Psat and 14.25% Peaking PAE in 28-nm Bulk CMOS Process," IEEE Transactions on Microwave Theory and Techniques, doi: 10.1109/TMTT.2023.3322742.
- [63] F. Meng, X. Chen, W. Xu and K. Ma, "Self-Packaged Low-Loss Low-Pass Filter With Hexagonal Suspended Toroidal Inductors," IEEE Microwave and Wireless Technology Letters, vol. 33, no. 2, pp. 137-140, Feb. 2023, doi: 10.1109/LMWC.2022.3204845.
- [64] Xiaoxu Tian, Nengxu Zhu, Zhiheng Liu, Fanyi Meng, "A Compact 210-to-250 GHz Quad-Stacked Power Amplifier in 0.13-μmSiGe BiCMOS", IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP 2022), 2022
- [65] Huiying Wu, Jinxin Li, Fanyi Meng, "A 220 GHz 5-Bit Phase Shifter with Low Phase-Error in 0.13μm BiCMOS Technology", IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP 2022), 2022
- [66] Man Bai, Xianghui Chen, Zenglong Zhao, Qingsong Zhao, Guiyue Mao, Wengan Li, Baijin Song, Fanyi Meng, "A Wideband Noise-Canceling Low Noise Amplifier Employing Current- Reuse and Negative Feedback Techniques", IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP 2022), 2022
- [67] N. Zhang, K. Ma, Y. Wang and F. Meng, "A 77-GHz Low-Conversion-Loss Fourth-Harmonic Mixer on SISL Platform", IEEE Microw. Wireless Compon. Lett., 2022
- [68] Z. Xu, F. Meng, K. Ma, H. Fu, X. Duan, M. Lu, Y. Bie, and J. Liu., "A 16-24-GHz SiGe Decibel-Linear Low-Gain-Error Digitally Controlled High-Efficiency Variable Gain Amplifier", IEEE Microw. Wireless Compon. Lett., 2022
- [69] Z. Liu, F. Meng, K. Ma, and K. S. Yeo, "Current Harmonics Analysis and Design for Load-Independent ZVS Single-Switch Resonant DC/DC Converter", IEEE Transactions on Power Electronics, 2022
- [70] N. Zhang, K. Ma, Y. Wang, and F. Meng, "A W-Band Broadband Self-Packaged Compact SISL Tripler using FR4 substrate", Microwave and Optical Technology Letters, 2022
- [71] H. Wu, H. Fu, F. Meng, and K. Ma, "Responsivity enhancement techniques for CMOS source‐driven terahertz detectors", Microwave and Optical Technology Letters, 2022
- [72] B. Liu, K, Ma, H. Fu, K. Wang, and F. Meng, "Recent Progress of Silicon-based Millimeter-wave SoCs for Short-Range Radar Imaging and Sensing Applications", IEEE Transactions on Circuits and Systems II: Express Briefs, 2022
- [73] Y. Wang, F. Meng, K. Ma, and M. Lu, "Design of a dB-Linear 21.5-to-36 GHz 6-Bit RF-VGA with Accurate Gain Control in 0.13-µm SiGe BiCMOS Technology", IEEE International Symposium on Circuits and Systems (ISCAS), 2022
- [74] A 190-to-220GHz 4-bit Passive Attenuator with 1.4dB Insertion Loss and Sub-0.4dB RMS Amplitude Error using Magnetically Switchable Coupled-Lines in 0.13-μm CMOS Technology
- [75] Z. Ma, K. Ma, K. Wang, and F. Meng, "A 28GHz Compact 3-Way Transformer-Based Parallel-Series Doherty Power Amplifier With 20.4%/14.2% PAE at 6-/12-dB Power Back-off and 25.5dBm P SAT in 55nm Bulk CMOS", ISSCC, 2022
- [76] F. Meng and N. Zhu, "An MSCL-Based Attenuator With Ultralow Insertion Loss and Intrinsic ESD-Protection for Millimeter-Wave and Terahertz Applications," IEEE Transactions on Microwave Theory and Techniques, vol. 71, no. 1, pp. 240-249, Jan. 2023, doi: 10.1109/TMTT.2022.3225318.
- Books
- [1] Fanyi Meng, Kaixue Ma, Kiat Seng Yeo, "Millimeter-Wave IC Design Techniques for Beam-Forming Applications", Lambert Publishing, 2016
- [2] Kiat-Seng Yeo, Chirn Chye Boon, Xiang Yi, Fanyi Meng, "CMOS Millimeter-Wave Integrated Circuits for Next Generation Wireless Communication Systems", World Scientific Publishing, 2018