Y. Zhang, N. Zhu, S. Bai and F. Meng, "A 220-GHz High Linearity Power Amplifier with 25.7-dB Gain and 9.7-dB PSAT," 2023 IEEE MTT-S International Wireless Symposium (IWS), Qingdao, China, 2023, pp. 1-4, doi: 10.1109/IWS58240.2023.10222902. (IWS2023 Flash Competition 最佳论文奖第二名)
点击次数:
上一条:Z. Liu, Z. Lin, J. Wang, K. Ma, D. Disney and F. Meng, "A Fully-Integrated Heterogenous Si-CMOS/GaN 500MHz 6V-to-18V Boost Converter Chip," IEEE Transactions on Power Electronics, vol. 38, no. 5, pp. 5615-5618, May 2023, doi: 10.1109/TPEL.2023.3236825. (IEEE TPE 38, 5615-5618, (2023))
下一条:G. Ma, X. Chen, X. Zhang, M. Bai and F. Meng, "A 0.3-7.7GHz Noise-Canceling Low-Noise Amplifier in 55nm CMOS," 2023 IEEE MTT-S International Wireless Symposium (IWS), Qingdao, China, 2023, pp. 1-4, doi: 10.1109/IWS58240.2023.10222271. (IWS2023多语种学生视频竞赛(MVC Competition)三等奖)