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Selected Papers

Polarization-Engineered Quaternary Barrier InAlGaN/AlGaN Heterostructure Field-Effect Transistors Toward Robust High-Frequency Power Performance in AlGaN Channel Electronics
2021-11-21  Hits:

Journal:IEEE Transactions on Electron Devices
All the Authors:Lei Li and Akio Wakejima
First Author:Lei Li
Indexed by:Unit Twenty Basic Research
Correspondence Author:Lei Li
Volume:68
Issue:11
Page Number:5535-5540
Translation or Not:no
CN No.:null
Date of Publication:2021-11-21

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