李磊
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Academic Achievements
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Selected Papers
more+- [1] Bin Zhao. Vertical GaN Schottky Barrier Diodes With Polarized P-InGaN/P-GaN Heterojunction Termination Extension Structure .IEEE Electron Device Letters .2026 ,47 (7) :1330-1333
- [2] Liyang Chai. Thermo-mechanical behavior of high-power GaN-based blue laser diodes .Physica Scripta .2026 ,101 (25) :255506
- [3] Lei Li. Polarization-Engineered Quaternary Barrier InAlGaN/AlGaN Heterostructure Field-Effect Transistors Toward Robust High-Frequency Power Performance in AlGaN Channel Electronics .IEEE Transactions on Electron Devices .2021 ,68 (11) :5535-5540
- [4] Lei Li. Demonstration of high thermal performance GaN-on-graphite composite bonded substrate for application in III-V nitride electronics .Applied Physics Express .2021 ,14 (9) :091002
- [5] Lei Li. Polarization engineering via InAlN/AlGaN heterostructures for demonstration of normally-off AlGaN channel field effect transistors .Applied Physics Letters .2020 ,117 (15) :152108
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