Academic Achievements
Books
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Selected Papers
more+- [1] Lei Li. Polarization-Engineered Quaternary Barrier InAlGaN/AlGaN Heterostructure Field-Effect Transistors Toward Robust High-Frequency Power Performance in AlGaN Channel Electronics .IEEE Transactions on Electron Devices .2021 ,68 (11) :5535-5540
- [2] Lei Li. Demonstration of high thermal performance GaN-on-graphite composite bonded substrate for application in III-V nitride electronics .Applied Physics Express .2021 ,14 (9) :091002
- [3] Lei Li. Polarization engineering via InAlN/AlGaN heterostructures for demonstration of normally-off AlGaN channel field effect transistors .Applied Physics Letters .2020 ,117 (15) :152108
- [4] Lei Li. Bonding GaN on high thermal conductivity graphite composite with adequate interfacial thermal conductance for high power electronics applications .Applied Physics Letters .2020 ,116 (14) :142105
- [5] Lei Li. Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels .Applied Physics Express .2012 ,5 (5) :051001
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