Affiliation of Author(s):School of Microelectronics, Tianjin University
Journal:IEEE Electron Device Letters
Place of Publication:IEEE
Funded by:"Peiyang Scholars Program" of Tianjin University
Key Words:GaN, vertical Schottky barrier diodes (SBDs), p-InGaN/p-GaN, PolHJ, junction termination
All the Authors:Bin Zhao, Liyang Chai, Weizhe Wang, Ningyang Liu, and Lei Li
First Author:Bin Zhao
Indexed by:Unit Twenty Basic Research
Correspondence Author:Lei Li
Volume:47
Issue:7
Page Number:1330-1333
Translation or Not:no
CN No.:null
Date of Publication:2026-06-01