李磊
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Selected Papers
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2023-03-21
Lei Li.Polarization-Engineered Quaternary Barrier InAlGaN/AlGaN Heterostructure Field-Effect Transistors Toward Robust High-Frequency Power Performance in AlGaN Channel Electronics.IEEE Transactions on Electron Devices.2021,68(11):5535-5540
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2023-03-21
Lei Li.Demonstration of high thermal performance GaN-on-graphite composite bonded substrate for application in III-V nitride electronics.Applied Physics Express.2021,14(9):091002
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2023-03-21
Lei Li.Polarization engineering via InAlN/AlGaN heterostructures for demonstration of normally-off AlGaN channel field effect transistors.Applied Physics Letters.2020,117(15):152108
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2023-03-21
Lei Li.Bonding GaN on high thermal conductivity graphite composite with adequate interfacial thermal conductance for high power electronics applications.Applied Physics Letters.2020,116(14):142105
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2023-03-21
Lei Li.Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels.Applied Physics Express.2012,5(5):051001
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2023-03-21
Lei Li.High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films.Applied Physics Letters.2017,111(10):102106
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2023-03-21
Lei Li.Distinct light emission from two-dimensional electron gas at a lattice-matched InAlN/ AlGaN heterointerface.Applied Physics Letters.2018,112(10):102102
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2023-03-21
Lei Li.Ultrathin inserted AlGaN/InAlN heterojunction for performance improvement in AlGaN-based deep ultraviolet light-emitting diodes.Applied Physics Express.2019,12(1):011010
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2023-03-21
Lei Li.Enhanced Emission Efficiency of Deep Ultraviolet Light-Emitting AlGaN Multiple Quantum Wells Grown on an N-AlGaN Underlying Layer.IEEE Photonics Journal.2016,8(5):1601710
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2023-03-21
Lei Li.Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with n-AlGaN underlayers.Semiconductor Science and Technology.2015,30(12):125012
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