Selected Papers
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2023-03-21
Lei Li.Enhanced Emission Efficiency of Deep Ultraviolet Light-Emitting AlGaN Multiple Quantum Wells Grown on an N-AlGaN Underlying Layer.IEEE Photonics Journal.2016,8(5):1601710
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2023-03-21
Lei Li.Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with n-AlGaN underlayers.Semiconductor Science and Technology.2015,30(12):125012
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2023-03-21
Lei Li.Inclined Dislocation Generation in Compressive-Strain-Enhanced Mg-Doped GaN/Al0.15Ga0.85N Superlattice with AlN Interlayer.Applied Physics Express.2013,6(6):061002
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2023-03-21
Lei Li.The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates.Applied Physics A.2012,108:857-862
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