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Selected Papers

Ultrathin inserted AlGaN/InAlN heterojunction for performance improvement in AlGaN-based deep ultraviolet light-emitting diodes
2019-01-04  Hits:

Journal:Applied Physics Express
All the Authors:Lei Li , Yuta Miyachi, Makoto Miyoshi, and Takashi Egawa
First Author:Lei Li
Indexed by:Unit Twenty Basic Research
Correspondence Author:Lei Li
Volume:12
Issue:1
Page Number:011010
Translation or Not:no
CN No.:null
Date of Publication:2019-01-04

Pre One:Distinct light emission from two-dimensional electron gas at a lattice-matched InAlN/ AlGaN heterointerface

Next One:Enhanced Emission Efficiency of Deep Ultraviolet Light-Emitting AlGaN Multiple Quantum Wells Grown on an N-AlGaN Underlying Layer

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