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Selected Papers

Polarization engineering via InAlN/AlGaN heterostructures for demonstration of normally-off AlGaN channel field effect transistors
2020-10-15  Hits:

Journal:Applied Physics Letters
All the Authors:Lei Li, Ryohei Yamaguchi, and Akio Wakejima
First Author:Lei Li
Indexed by:Unit Twenty Basic Research
Correspondence Author:Lei Li
Volume:117
Issue:15
Page Number:152108
Translation or Not:no
CN No.:null
Date of Publication:2020-10-15

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