天津大学教师个人主页系统秦国轩 G. Qin, G. Wang, N. Jiang, J. Ma, Z. Ma: On the configuration- and frequency-dependent linearity characteristics of SiGe HBTs under different impedance matching conditions. Microelectronics Reliability, 53: 409-413 (2013). Personal Profile

中文

Brief Introduction
Education Background
Research Interests
Courses
Professional Membership
Positions & Employments
Academic achievements
Honors & Awards
Team
Album

Guoxuan Qin

School

School of Microelectronics

Professional Title

Professor

Discipline

Microelectronics and Solid-state Electronics

Other Contact Information

Selected Papers

Current position: Personal Profile > Academic Achievements > Selected Papers

G. Qin, G. Wang, N. Jiang, J. Ma, Z. Ma: On the configuration- and frequency-dependent linearity characteristics of SiGe HBTs under different impedance matching conditions. Microelectronics Reliability, 53: 409-413 (2013).

Hits:

Translation or Not:no

Pre One:G. Qin, Y. Yan, N. Jiang, J. Ma, P. Ma, M. Racanelli, Z. Ma: RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures. Microelectronics Reliability, 52: 2568-2571 (2012).

Next One:G. Qin, H.C. Yuan, G.K. Celler, J. Ma, Z. Ma: Influence of bending strains on radio frequency characteristics of flexible microwave switches using single-crystal silicon nanomembranes on plastic substrate. Applied Physics Letters, 99: 153106 (2011).