天津大学教师个人主页系统秦国轩 G. Qin, Y. Yan, N. Jiang, J. Ma, P. Ma, M. Racanelli, Z. Ma: RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures. Microelectronics Reliability, 52: 2568-2571 (2012). Personal Profile

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Guoxuan Qin

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School of Microelectronics

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Professor

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Microelectronics and Solid-state Electronics

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Selected Papers

Current position: Personal Profile > Academic Achievements > Selected Papers

G. Qin, Y. Yan, N. Jiang, J. Ma, P. Ma, M. Racanelli, Z. Ma: RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures. Microelectronics Reliability, 52: 2568-2571 (2012).

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Next One:G. Qin, G. Wang, N. Jiang, J. Ma, Z. Ma: On the configuration- and frequency-dependent linearity characteristics of SiGe HBTs under different impedance matching conditions. Microelectronics Reliability, 53: 409-413 (2013).