天津大学教师个人主页系统梁士雄 Dong Y, Liang H, Liang S, et al. High-efficiency GaN frequency doubler based on thermal resistance analysis for continuous wave input[J]. IEEE Transactions on Electron Devices, 2023, 70(9): 4565-4571.(JOURNAL OF PHYSICS D-APPLIED PHYSICS,中科院三区) 中文主页

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梁士雄

教师拼音名称：Liang Shixiong
出生日期：1981-01-11
性别：男
职称：教授
所属院系：微电子学院

论文成果

Current position:: 中文主页 >> 学术成就 >> 论文成果

Dong Y, Liang H, Liang S, et al. High-efficiency GaN frequency doubler based on thermal resistance analysis for continuous wave input[J]. IEEE Transactions on Electron Devices, 2023, 70(9): 4565-4571.(JOURNAL OF PHYSICS D-APPLIED PHYSICS,中科院三区)

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发表刊物:IEEE Trans. Electron Devices
合写作者:azhou Dong, Huajie Liang, Shixiong Liang, Hongji Zhou, Jianghua Yu, Hailong Guo, Hongxin Zeng, Zhihong Feng and Yaxin Zhang
第一作者:Yazhou Dong , Huajie Liang
论文类型:Development research
通讯作者:Shixiong Liang; Yaxin Zhang.
是否译文:否
CN号:null

附件:

1. High-Efficiency_GaN_Frequency_Doubler_Based_on_Thermal_Resistance_Analysis_for_Continuous_Wave_Input.pdf

上一条:Liang S, Song X, Zhang L, et al. A 177–183 GHz high-power GaN-based frequency doubler with over 200 mW output power[J]. IEEE Electron Device Letters, 2020, 41(5): 669-672.(IEEE ELECTRON DEVICE LETTERS,中科院二区)

下一条:Liang S, Gu G, Guo H, et al. Homoepitaxial GaN terahertz planar Schottky barrier diodes[J]. Journal of Physics D: Applied Physics, 2022, 55(48): 484004.(IEEE TRANSACTIONS ON ELECTRON DEVICES,中科院三区)