天津大学教师个人主页系统梁士雄 Liang S, Song X, Zhang L, et al. A 177–183 GHz high-power GaN-based frequency doubler with over 200 mW output power[J]. IEEE Electron Device Letters, 2020, 41(5): 669-672.(IEEE ELECTRON DEVICE LETTERS,中科院二区) 中文主页

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梁士雄

教师拼音名称：Liang Shixiong
出生日期：1981-01-11
性别：男
职称：教授
所属院系：微电子学院

论文成果

Current position:: 中文主页 >> 学术成就 >> 论文成果

Liang S, Song X, Zhang L, et al. A 177–183 GHz high-power GaN-based frequency doubler with over 200 mW output power[J]. IEEE Electron Device Letters, 2020, 41(5): 669-672.(IEEE ELECTRON DEVICE LETTERS,中科院二区)

点击次数:

发表刊物:IEEE Electron Device Letters
合写作者:Shixiong Liang , Xubo Song, Lisen Zhang, Yuanjie Lv , Yuangang Wang , Bihua Wei, Yanmin Guo, Guodong Gu, Bo Wang, Shujun Cai , Member, IEEE, and Zhihong Feng
第一作者:Shixiong Liang
论文类型:Development research
通讯作者:Yuanjie Lv; Zhihong Feng
是否译文:否
CN号:null

附件:

1. A 177–183 GHz High-Power GaN-Based Frequency Doubler With Over 200 mW Output Power.pdf

上一条:Zhang L, Liang S, Lv Y, et al. High-power 300 GHz solid-state source chain based on GaN doublers[J]. IEEE Electron Device Letters, 2021, 42(11): 1588-1591.(IEEE ELECTRON DEVICE LETTERS,中科院二区)

下一条:Dong Y, Liang H, Liang S, et al. High-efficiency GaN frequency doubler based on thermal resistance analysis for continuous wave input[J]. IEEE Transactions on Electron Devices, 2023, 70(9): 4565-4571.(JOURNAL OF PHYSICS D-APPLIED PHYSICS,中科院三区)