梁士雄
- 教师拼音名称：Liang Shixiong
- 教师拼音名称：Liang Shixiong
- 出生日期：1981-01-11
- 出生日期：1981-01-11
- 性别：男
- 性别：男
- 8debd2526bd6012b220ba2f37aace4aec6673404fbd034ea52eb59e00d3910f2a5ae4a4356cec7cd73bb399b65c09659b56149ba901fbf722da29a19989373835be86f4774ed8a8979ca2921ee6655e8759b47f05004a06896343f75a5b45f715ded71ebe917bfa29d554025745ecf9e47e6110a909b25ef65a7abed4260e676
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· A terahertz non-linear diode chain based on an asymmetric double-layer topology（Nature Electronics，中科院一区）
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· Dong Y, Zhou J, Liang H, et al. A New Generation GaN/SiC Monolithically Integrated Frequency Sources With Ultrahigh-Power Output Based on Thermal Resistance Calculation Model[J]. IEEE Transactions on Microwave Theory and Techniques, 2025.（IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,中科院一区）
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· Zeng H, Liang H, Zhang Y, et al. High-precision digital terahertz phase manipulation within a multichannel field perturbation coding chip[J]. Nature Photonics, 2021, 15(10):751-757,（NATURE PHOTONICS,中科院一区）（影响因子:32.3, 引用次数：90次）
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· Liang S, Gu G, Guo H, et al. Homoepitaxial GaN terahertz planar Schottky barrier diodes[J]. Journal of Physics D: Applied Physics, 2022, 55(48): 484004.(JOURNAL OF PHYSICS D-APPLIED PHYSICS,中科院三区)
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· Zeng H, Gong S, Wang L, et al. High‐speed modulations of guided terahertz waves via 2DEG tiny metasurfaces[J]. Laser & Photonics Reviews, 2023, 17(9): 2300122.(LASER & PHOTONICS REVIEWS，中科院一区)
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· KOU W, LIANG S, ZHOU H, et al. A review of terahertz sources based on planar Schottky diodes[J]. Chinese Journal of Electronics, 2022, 31(3): 467-487.(CHINESE JOURNAL OF ELECTRONICS,中科院三区)
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· Song X, Liang S, Lv Y, et al. GaN-based frequency doubler with pulsed output power over 1 W at 216 GHz[J]. IEEE Electron Device Letters, 2021, 42(12): 1739-1742.(IEEE ELECTRON DEVICE LETTERS,中科院二区)
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· Zhao Y, Zhang Y, Shi Q, et al. Dynamic photoinduced controlling of the large phase shift of terahertz waves via vanadium dioxide coupling nanostructures[J]. Acs Photonics, 2018, 5(8): 3040-3050,(ACS PHOTONICS,中科院一区,（引用次数：148次)
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· Zhang B, Ji D, Fang D, et al. A novel 220-GHz GaN diode on-chip tripler with high driven power[J]. IEEE Electron Device Letters, 2019, 40(5): 780-783,95Citations(IEEE ELECTRON DEVICE LETTERS,中科院二区（引用次数：107次)
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· Zhang L, Liang S, Lv Y, et al. High-power 300 GHz solid-state source chain based on GaN doublers[J]. IEEE Electron Device Letters, 2021, 42(11): 1588-1591.(IEEE ELECTRON DEVICE LETTERS,中科院二区)
