刘新军
- 教师名称：刘新军
- 教师拼音名称：Liu Xinjun
- 出生日期：1980-10-04
- 性别：男
- 学科：Materials Physics and Chemistry
- 职称：副教授
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Resistive RAM, method for fabricating the same, and method for driving the same
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申请专利人：H. Hwang, X. Liu, M. Son
专利说明:US 9214631 B2, Publication date on Dec. 15, 2015
专利类型:PCT or foreign applications
专利状态:Authorized patents
是否职务专利:否
上一篇：Adjusting and controlling methods of multiform resistance switching effects in multi-layer film structure for resistance random access memory 下一篇：Resistance change memory device having threshold switching and memory switching characteristics, method of fabricating the same, and resistance change memory device including the same