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孟凡易
- 教师拼音名称：Meng Fanyi
- 出生日期：1987-11-30
- 性别：男
- 职称：教授
- 所属院系：微电子学院
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· L. Wang and F. Meng, "A D-Band 5-bit Active Phase Shifter Supporting Bi-Directional Operations in 65nm CMOS," 2023 16th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT), Guangzhou, China, 2023, pp. 1-3, doi: 10.1109/UCMMT58116.2023.10310634.
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· L. Zhang, K. Ma, H. Fu, Y. Wang, K. Wang, F. Meng, and X. Li, "A Compact 140-GHz Power Amplifier With 15.4-dBm Psat and 14.25% Peaking PAE in 28-nm Bulk CMOS Process," IEEE Transactions on Microwave Theory and Techniques, doi: 10.1109/TMTT.2023.3322742.
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· Shen, H, Wang, Y, Meng, F, Ma, K. Slow-wave substrate integrated suspended parallel strip line and its application to rat-race coupler. Microw Opt Technol Lett. 2023; 65: 3196-3203. doi:10.1002/mop.33870
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· Shen, H., Wang, Y., Meng, F. and Ma, K. (2023), A compact differential branch-line coupler using folded substrate integrated suspended parallel strip line. Electron. Lett., 59: e13021. https://doi.org/10.1049/ell2.13021
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· Z. Miao, N. Zhu, Z. Yang, J. Li and F. Meng, "A W-Band High Isolation SPDT Switch Using Reverse-saturated 0.13μm SiGe HBTs," 2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT), Qingdao, China, 2023, pp. 1-4, doi: 10.1109/ICMMT58241.2023.10276706.
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· Z. Zhao, X. Chen, F. Meng, K. Ma and K. S. Yeo, "A 211.4-to-234.8 GHz 25.6-dB Differential Amplifier With Compact Terminal Multi-Coupled and Auxiliary Interstage-Coupled Matching Networks," IEEE Tran. Circuits and Systems II: Express Briefs, doi: 10.1109/TCSII.2023.3324259.
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· X. Wang et al., "An L-/S-Band SPDT Switch With 30-dBm OP1dB and 33-dB Isolation in CMOS SOI," IEEE Microwave and Wireless Technology Letters, doi: 10.1109/LMWT.2023.3313168.
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· Z. Liu, Z. Zhao, Y. Kai, Y. Lao, J. Wang and F. Meng, "Demonstration of Low dv/dt Class-Ф2 DC-DC Converter with 50% Duty Cycle," IEEE Transactions on Power Electronics, vol. 38, no. 12, pp. 15759-15767, Dec. 2023, doi: 10.1109/TPEL.2023.3314445.
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· Z. Yang, K. Ma, F. Meng and B. Liu, "A 120-GHz Class-F Frequency Doubler With 7.8-dBm POUT in 55-nm Bulk CMOS," IEEE Journal of Solid-State Circuits. doi: 10.1109/JSSC.2023.3253287. (IEEE JSSC 58, 2173-2188 (2023))
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· X. Li, K. Wang, Y. Zhou, Y. Pan, F. Meng and K. Ma, "A Wide Input Range All-NMOS Rectifier with Gate Voltage Boosting Technique for Wireless Power Transfer," IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 70, no. 11, pp. 4023-4027, June 2023. doi: 10.1109/TCSII.2023.3285620. (IEEE TCAS-II 70, 4023-4027 (2023))
