孟凡易
- 教师拼音名称:Meng Fanyi
- 出生日期:1987-11-30
- 性别:男
- 职称:教授
- 所属院系:微电子学院
- c052ba858cc6831f7430026d1b4abfb5f94c081ed336e284cdf999007bfe6ea4316de3d4cf2c6c5e2f42ed219db506bcb24b854ba419e3917247541fdf558249f7058c5018e3fcb2962c4962613964e554b12fd806ec4f6868602c04101eb27b548f6a7c5459997d542aa442fee09e6d12bceeb872fc946841274dc72669e89d
-
· Y. Luo, S. Zhao, N. Yan, W. An, K. Ma and F. Meng, "A Multi-Compressed-High-Order Modes Dipole Antenna with Wide-Beam and High-Gain Radiations in Two Different Bands," IEEE Antennas and Wireless Propagation Letters, doi: 10.1109/LAWP.2023.3237391. (IEEE AWPL Early Access, (2023))
-
· Z. Liu, Z. Lin, J. Wang, K. Ma, D. Disney and F. Meng, "A Fully-Integrated Heterogenous Si-CMOS/GaN 500MHz 6V-to-18V Boost Converter Chip," IEEE Transactions on Power Electronics, vol. 38, no. 5, pp. 5615-5618, May 2023, doi: 10.1109/TPEL.2023.3236825. (IEEE TPE 38, 5615-5618, (2023))
-
· Y. Zhang, N. Zhu, S. Bai and F. Meng, "A 220-GHz High Linearity Power Amplifier with 25.7-dB Gain and 9.7-dB PSAT," 2023 IEEE MTT-S International Wireless Symposium (IWS), Qingdao, China, 2023, pp. 1-4, doi: 10.1109/IWS58240.2023.10222902. (IWS2023 Flash Competition 最佳论文奖第二名)
-
· G. Ma, X. Chen, X. Zhang, M. Bai and F. Meng, "A 0.3-7.7GHz Noise-Canceling Low-Noise Amplifier in 55nm CMOS," 2023 IEEE MTT-S International Wireless Symposium (IWS), Qingdao, China, 2023, pp. 1-4, doi: 10.1109/IWS58240.2023.10222271. (IWS2023多语种学生视频竞赛(MVC Competition)三等奖)
-
· Y. Zhang, H. Wu, Z. Liu, L. Wang, Z. Li and F. Meng, "A SiGe 92–96 GHz 5-bit Active Phase Shifter for W-Band Phased Arrays," 2023 IEEE MTT-S International Wireless Symposium (IWS), Qingdao, China, 2023, pp. 1-3, doi: 10.1109/IWS58240.2023.10222268.
-
· S. Fu, X. Tian, Z. Yang, Z. Zhao, Y. Cui and F. Meng, "A 94-GHz SiGe Power Amplifier With 18.5 dB Power Gain and 14.4 dBm PSAT," 2023 IEEE MTT-S International Wireless Symposium (IWS), Qingdao, China, 2023, pp. 1-4, doi: 10.1109/IWS58240.2023.10222899.
-
· Z. Ma, Z. Ma, K. Ma, F. Meng and K. Wang, "A 28-GHz 26.8-dBm Doherty Power Amplifier With Four-Way Differential Hybrid Load-Modulated Combiner in 55-nm CMOS," IEEE Microwave and Wireless Technology Letters.
-
· X. Wang et al., "An L-/S-Band SPDT Switch With 30-dBm OP1dB and 33-dB Isolation in CMOS SOI," IEEE Microwave and Wireless Technology Letters, doi: 10.1109/LMWT.2023.3313168.
-
· G. Ma, F. Meng, K. Wang, K. Ma and K. S. Yeo, "A S/C-Band 5-Bit Passive Attenuator With Phase-Lead Compensation in 55nm Bulk CMOS," IEEE Transactions on Circuits and Systems II: Express Briefs, doi: 10.1109/TCSII.2023.3318608.
-
· Z. Zhao, X. Chen, F. Meng, K. Ma and K. S. Yeo, "A 211.4-to-234.8 GHz 25.6-dB Differential Amplifier With Compact Terminal Multi-Coupled and Auxiliary Interstage-Coupled Matching Networks," IEEE Tran. Circuits and Systems II: Express Briefs, doi: 10.1109/TCSII.2023.3324259.